Cu(In, Ga)(S, Se)2 electrodeposition and characterizations using improved electrolytes

Because it has a wider band gap than CuInGaSe2 [CIGS], Cu(In, Ga)(S, Se)2 [CIGSS] offers significantly superior performance as a solar cell thin film than CuInGaSe2. According to earlier reports, manufacturing Cu(In, Ga)(S, Se)2 requires adding elements during the annealing process using a hydrogen sulfide partial pressure or from the vapor phase using a lengthy and difficult-to-control procedure. The CIGSS electrodeposition electrolyte in this study was comparable to the CuInGaSe2 electrodeposition electrolyte’s composition. However, it added sulfur thiosulphate as a sulfur electrodeposition source, and the electrolyte’s pH was maintained below 2. This method created a Cu(In, Ga)(S, Se)2 compound with the desired stoichiometry without adding elements from the vapor phase during annealing. Polarization curves for several disk rotation speeds were supplied and analyzed to improve the operational deposition parameters. The annealing procedure did not require the addition of any metal. The Energy-dispersive X-ray spectroscopy method (Epsilon 4 Energy-dispersive X-ray spectroscopy) was used to examine the compound’s final composition. Lastly, the thickness and Cu(In, Ga)(S, Se)2 crystallography were measured using X-ray diffraction analysis (Filmetrics Profilm3D).