Skip to search boxSkip to navigationSkip to main content

Binary and ternary atomic layers built from carbon, boron, and nitrogen

  • Li Song
    ,
  • Zheng Liu
    ,
  • Arava Leela Mohana Reddy
    ,
  • Narayanan Tharangattu Narayanan
    ,
  • ,
  • Juan Peng
  • Shinshu University
    ,
  • Rice University
    ,
  • Ningxia University
Research Output:
Contribution to journal
Review article
Peer-review

Publication metrics

Metrics

SciVal
Citations
247
Scopus
Citations
SciVal
FWCI
2.96
SciVal
Author count
10
SciVal
Paper percentile
92
SciVal
Top percentile
10

Abstract

Two-dimensional (2D) atomic layers derived from bulk layered materials are very interesting from both scientific and application viewpoints, as evidenced from the story of graphene. Atomic layers of several such materials such as hexagonal boron nitride (h-BN) and dichalcogenides are examples that complement graphene. The observed unconventional properties of graphene has triggered interest in doping the hexagonal honeycomb lattice of graphene with atoms such as boron (B) and nitrogen (N) to obtain new layered structures. Individual atomic layers containing B, C, and N of various compositions conform to several stable phases in the three-component phase diagram of B-C-N. Additionally, stacking layers built from C and BN allows for the engineering of new van-der-Waals stacked materials with novel properties. In this paper, the synthesis, characterization, and properties of atomically thin layers, containing B, C, and N, as well as vertically assembled graphene/h-BN stacks are reviewed. The electrical, mechanical, and optical properties of graphene, h-BN, and their hybrid structure are also discussed along with the applications of such materials.

Publication Information

Output type

Research Output:
Contribution to journal
Review article
Peer-review

Original language

English

Pages from-to (Number of pages)

Pages 4878-4895 (18 pages)

Journal (Volume, Issue Number)

Advanced Materials (Volume 24, Issue 36)

Publication milestones

  • Published - 18/09/2012

Publication status

Published - 18/09/2012

ISSN

0935-9648

Publication IDs

  • Scopus: 84866254707
  • WOS: 000308637900006