Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates

P. E. Rodríguez-Hernández, J. G. Quiñones-Galván, L. Marasamy, M. Morales-Luna, J. Santos-Cruz, J. S. Arias-Cerón, O. Zelaya-Angel, F. de Moure-Flores

Resultado de la investigación

Resumen

Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.

Idioma originalEnglish
Número de artículo104600
PublicaciónMaterials Science in Semiconductor Processing
Volumen103
DOI
EstadoPublished - 15 nov 2019
Publicado de forma externa

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Huella Profundice en los temas de investigación de 'Optoelectronic properties of undoped and Al, B and Ga-doped In<sub>2</sub>S<sub>3</sub> thin films grown by CBD on flexible PET/ITO substrates'. En conjunto forman una huella única.

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    Rodríguez-Hernández, P. E., Quiñones-Galván, J. G., Marasamy, L., Morales-Luna, M., Santos-Cruz, J., Arias-Cerón, J. S., Zelaya-Angel, O., & de Moure-Flores, F. (2019). Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates. Materials Science in Semiconductor Processing, 103, [104600]. https://doi.org/10.1016/j.mssp.2019.104600