TY - JOUR
T1 - Characterization of MoO3 thin films deposited by laser ablation
AU - Campos-Gonzalez, Enrique
AU - Camps, Enrique
AU - Morales-Luna, Michael
AU - Rivera-Rodriguez, Carlos
AU - Basurto, Rafael
PY - 2020/10/15
Y1 - 2020/10/15
N2 - Molybdenum oxide thin films were deposited using the laser ablation technique, at three values of working pressure and four values of the mean kinetic energy (E
k) of the plasma ions. The structural characterization of the films performed by X-ray diffraction and Raman spectroscopies showed the presence of the α–MoO
3 phase in all cases. On the other hand, the value of the band-gap varied from 2.8 to 3.3 eV, depending on the experimental conditions. The XPS analysis showed a variation of the stoichiometry from MoO
2.5 to MoO
3.4 which could explain the variation of the band-gap.
AB - Molybdenum oxide thin films were deposited using the laser ablation technique, at three values of working pressure and four values of the mean kinetic energy (E
k) of the plasma ions. The structural characterization of the films performed by X-ray diffraction and Raman spectroscopies showed the presence of the α–MoO
3 phase in all cases. On the other hand, the value of the band-gap varied from 2.8 to 3.3 eV, depending on the experimental conditions. The XPS analysis showed a variation of the stoichiometry from MoO
2.5 to MoO
3.4 which could explain the variation of the band-gap.
UR - http://www.scopus.com/inward/record.url?scp=85088219694&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85088219694&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2020.128355
DO - 10.1016/j.matlet.2020.128355
M3 - Article
VL - 277
SP - 1
EP - 3
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
IS - 128355
M1 - 128355
ER -