Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates

P. E. Rodríguez-Hernández, J. G. Quiñones-Galván, L. Marasamy, M. Morales-Luna, J. Santos-Cruz, J. S. Arias-Cerón, O. Zelaya-Angel, F. de Moure-Flores*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.

Original languageEnglish
Article number104600
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 15 Nov 2019
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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