Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates

P. E. Rodríguez-Hernández; J. G. Quiñones-Galván; L. Marasamy; M. Morales-Luna; J. Santos-Cruz; J. S. Arias-Cerón; O. Zelaya-Angel; F. de Moure-Flores

doi:10.1016/j.mssp.2019.104600

Optoelectronic properties of undoped and Al, B and Ga-doped In₂S₃ thin films grown by CBD on flexible PET/ITO substrates

P. E. Rodríguez-Hernández, J. G. Quiñones-Galván, L. Marasamy, M. Morales-Luna, J. Santos-Cruz, J. S. Arias-Cerón, O. Zelaya-Angel, F. de Moure-Flores^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Undoped and Al, B and Ga-doped In₂S₃ thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In₂S₃ thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In₂S₃ films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In₂S₃ thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In₂S₃ thin films along with the resistivity values between 1 × 10⁻² and 1 × 10⁵ Ωcm.

Original language	English
Article number	104600
Journal	Materials Science in Semiconductor Processing
Volume	103
DOIs	https://doi.org/10.1016/j.mssp.2019.104600
Publication status	Published - 15 Nov 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Ltd

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2019.104600

Cite this

Rodríguez-Hernández, P. E., Quiñones-Galván, J. G., Marasamy, L., Morales-Luna, M., Santos-Cruz, J., Arias-Cerón, J. S., Zelaya-Angel, O., & de Moure-Flores, F. (2019). Optoelectronic properties of undoped and Al, B and Ga-doped In₂S₃ thin films grown by CBD on flexible PET/ITO substrates. Materials Science in Semiconductor Processing, 103, Article 104600. https://doi.org/10.1016/j.mssp.2019.104600

@article{799bfa67c8d548e89012edf152f0b545,

title = "Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates",

abstract = "Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.",

author = "Rodr{\'i}guez-Hern{\'a}ndez, {P. E.} and Qui{\~n}ones-Galv{\'a}n, {J. G.} and L. Marasamy and M. Morales-Luna and J. Santos-Cruz and Arias-Cer{\'o}n, {J. S.} and O. Zelaya-Angel and {de Moure-Flores}, F.",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2019",

month = nov,

day = "15",

doi = "10.1016/j.mssp.2019.104600",

language = "English",

volume = "103",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

}

Rodríguez-Hernández, PE, Quiñones-Galván, JG, Marasamy, L, Morales-Luna, M, Santos-Cruz, J, Arias-Cerón, JS, Zelaya-Angel, O & de Moure-Flores, F 2019, 'Optoelectronic properties of undoped and Al, B and Ga-doped In₂S₃ thin films grown by CBD on flexible PET/ITO substrates', Materials Science in Semiconductor Processing, vol. 103, 104600. https://doi.org/10.1016/j.mssp.2019.104600

TY - JOUR

T1 - Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates

AU - Rodríguez-Hernández, P. E.

AU - Quiñones-Galván, J. G.

AU - Marasamy, L.

AU - Morales-Luna, M.

AU - Santos-Cruz, J.

AU - Arias-Cerón, J. S.

AU - Zelaya-Angel, O.

AU - de Moure-Flores, F.

PY - 2019/11/15

Y1 - 2019/11/15

N2 - Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.

AB - Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.

UR - http://www.scopus.com/inward/record.url?scp=85068763074&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068763074&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2019.104600

DO - 10.1016/j.mssp.2019.104600

M3 - Article

AN - SCOPUS:85068763074

SN - 1369-8001

VL - 103

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 104600

ER -