Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates

P. E. Rodríguez-Hernández, J. G. Quiñones-Galván, L. Marasamy, M. Morales-Luna, J. Santos-Cruz, J. S. Arias-Cerón, O. Zelaya-Angel, F. de Moure-Flores

Research output: Contribution to journalArticle

Abstract

Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.

Original languageEnglish
Article number104600
JournalMaterials Science in Semiconductor Processing
Volume103
DOIs
Publication statusPublished - 15 Nov 2019
Externally publishedYes

Fingerprint

ITO (semiconductors)
Optoelectronic devices
Thin films
Substrates
thin films
Indium
indium
transmittance
Thioacetamide
citric acid
Citric acid
Hall effect
Sulfur
structural analysis
Structural analysis
Citric Acid
Chemical elements
Raman spectroscopy
Structural properties
baths

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Rodríguez-Hernández, P. E., Quiñones-Galván, J. G., Marasamy, L., Morales-Luna, M., Santos-Cruz, J., Arias-Cerón, J. S., ... de Moure-Flores, F. (2019). Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates. Materials Science in Semiconductor Processing, 103, [104600]. https://doi.org/10.1016/j.mssp.2019.104600
Rodríguez-Hernández, P. E. ; Quiñones-Galván, J. G. ; Marasamy, L. ; Morales-Luna, M. ; Santos-Cruz, J. ; Arias-Cerón, J. S. ; Zelaya-Angel, O. ; de Moure-Flores, F. / Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates. In: Materials Science in Semiconductor Processing. 2019 ; Vol. 103.
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title = "Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates",
abstract = "Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80{\%} in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.",
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Rodríguez-Hernández, PE, Quiñones-Galván, JG, Marasamy, L, Morales-Luna, M, Santos-Cruz, J, Arias-Cerón, JS, Zelaya-Angel, O & de Moure-Flores, F 2019, 'Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates', Materials Science in Semiconductor Processing, vol. 103, 104600. https://doi.org/10.1016/j.mssp.2019.104600

Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates. / Rodríguez-Hernández, P. E.; Quiñones-Galván, J. G.; Marasamy, L.; Morales-Luna, M.; Santos-Cruz, J.; Arias-Cerón, J. S.; Zelaya-Angel, O.; de Moure-Flores, F.

In: Materials Science in Semiconductor Processing, Vol. 103, 104600, 15.11.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optoelectronic properties of undoped and Al, B and Ga-doped In2S3 thin films grown by CBD on flexible PET/ITO substrates

AU - Rodríguez-Hernández, P. E.

AU - Quiñones-Galván, J. G.

AU - Marasamy, L.

AU - Morales-Luna, M.

AU - Santos-Cruz, J.

AU - Arias-Cerón, J. S.

AU - Zelaya-Angel, O.

AU - de Moure-Flores, F.

PY - 2019/11/15

Y1 - 2019/11/15

N2 - Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.

AB - Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.

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