Effect of a ZnSe layer on the thermochromic properties of MoO3 thin films

M. A. Arvizu; S. A. Tomás; M. Morales-Luna; J. Santoyo-Salazar; J. O. García-Torija; O. Zelaya-Angel

doi:10.1007/s10765-012-1279-9

Effect of a ZnSe layer on the thermochromic properties of MoO₃ thin films

M. A. Arvizu, S. A. Tomás^*, M. Morales-Luna, J. Santoyo-Salazar, J. O. García-Torija, O. Zelaya-Angel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The effect of a ZnSe layer on the thermochromic properties of MoO ₃ thin films was investigated. ZnSe/MoO₃ and MoO ₃ thin films were deposited by thermal evaporation in vacuum of MoO₃ and ZnSe powders. Photoacoustic spectra of the films indicated that the thermochromic response for the ZnSe/MoO₃ bilayer system was more accentuated, with respect to the MoO₃ sample, for temperature treatments above 150 C. This result is explained in terms of the injection of electrons from the II-VI semiconductor to the oxide film.

Original language	English
Pages (from-to)	2035-2040
Number of pages	6
Journal	International Journal of Thermophysics
Volume	33
Issue number	10-11
DOIs	https://doi.org/10.1007/s10765-012-1279-9
Publication status	Published - Nov 2012
Externally published	Yes

Bibliographical note

Funding Information:
Acknowledgments The technical assistance of E. Ayala, M. Guerrero, and A. Angeles is acknowledged. This study was partially supported by CONACyT (Project No. 168605) and ICyTDF (Project ICyTDF-ST).

Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Access to Document

10.1007/s10765-012-1279-9

Cite this

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title = "Effect of a ZnSe layer on the thermochromic properties of MoO3 thin films",

abstract = "The effect of a ZnSe layer on the thermochromic properties of MoO 3 thin films was investigated. ZnSe/MoO3 and MoO 3 thin films were deposited by thermal evaporation in vacuum of MoO3 and ZnSe powders. Photoacoustic spectra of the films indicated that the thermochromic response for the ZnSe/MoO3 bilayer system was more accentuated, with respect to the MoO3 sample, for temperature treatments above 150 C. This result is explained in terms of the injection of electrons from the II-VI semiconductor to the oxide film.",

author = "Arvizu, {M. A.} and Tom{\'a}s, {S. A.} and M. Morales-Luna and J. Santoyo-Salazar and Garc{\'i}a-Torija, {J. O.} and O. Zelaya-Angel",

note = "Funding Information: Acknowledgments The technical assistance of E. Ayala, M. Guerrero, and A. Angeles is acknowledged. This study was partially supported by CONACyT (Project No. 168605) and ICyTDF (Project ICyTDF-ST). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

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AU - Arvizu, M. A.

AU - Tomás, S. A.

AU - Morales-Luna, M.

AU - Santoyo-Salazar, J.

AU - García-Torija, J. O.

AU - Zelaya-Angel, O.

N1 - Funding Information: Acknowledgments The technical assistance of E. Ayala, M. Guerrero, and A. Angeles is acknowledged. This study was partially supported by CONACyT (Project No. 168605) and ICyTDF (Project ICyTDF-ST). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

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N2 - The effect of a ZnSe layer on the thermochromic properties of MoO 3 thin films was investigated. ZnSe/MoO3 and MoO 3 thin films were deposited by thermal evaporation in vacuum of MoO3 and ZnSe powders. Photoacoustic spectra of the films indicated that the thermochromic response for the ZnSe/MoO3 bilayer system was more accentuated, with respect to the MoO3 sample, for temperature treatments above 150 C. This result is explained in terms of the injection of electrons from the II-VI semiconductor to the oxide film.

AB - The effect of a ZnSe layer on the thermochromic properties of MoO 3 thin films was investigated. ZnSe/MoO3 and MoO 3 thin films were deposited by thermal evaporation in vacuum of MoO3 and ZnSe powders. Photoacoustic spectra of the films indicated that the thermochromic response for the ZnSe/MoO3 bilayer system was more accentuated, with respect to the MoO3 sample, for temperature treatments above 150 C. This result is explained in terms of the injection of electrons from the II-VI semiconductor to the oxide film.

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