Characterization of MoO3 thin films deposited by laser ablation

Enrique Campos-Gonzalez, Enrique Camps, Michael Morales-Luna, Carlos Rivera-Rodriguez, Rafael Basurto

Research output: Contribution to journalArticlepeer-review


Molybdenum oxide thin films were deposited using the laser ablation technique, at three values of working pressure and four values of the mean kinetic energy (E k) of the plasma ions. The structural characterization of the films performed by X-ray diffraction and Raman spectroscopies showed the presence of the α–MoO 3 phase in all cases. On the other hand, the value of the band-gap varied from 2.8 to 3.3 eV, depending on the experimental conditions. The XPS analysis showed a variation of the stoichiometry from MoO 2.5 to MoO 3.4 which could explain the variation of the band-gap.

Original languageEnglish
Article number128355
Pages (from-to)1-3
Number of pages3
JournalMaterials Letters
Issue number128355
Publication statusPublished - 15 Oct 2020

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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