Characterization of MoO3 thin films deposited by laser ablation

Enrique Campos-Gonzalez; Enrique Camps; Michael Morales-Luna; Carlos Rivera-Rodriguez; Rafael Basurto

doi:10.1016/j.matlet.2020.128355

Characterization of MoO3 thin films deposited by laser ablation

Enrique Campos-Gonzalez, Enrique Camps, Michael Morales-Luna, Carlos Rivera-Rodriguez, Rafael Basurto

Departamento de Diseño Industrial

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Molybdenum oxide thin films were deposited using the laser ablation technique, at three values of working pressure and four values of the mean kinetic energy (E _k) of the plasma ions. The structural characterization of the films performed by X-ray diffraction and Raman spectroscopies showed the presence of the α–MoO ₃ phase in all cases. On the other hand, the value of the band-gap varied from 2.8 to 3.3 eV, depending on the experimental conditions. The XPS analysis showed a variation of the stoichiometry from MoO _2.5 to MoO _3.4 which could explain the variation of the band-gap.

Original language	English
Article number	128355
Pages (from-to)	1-3
Number of pages	3
Journal	Materials Letters
Volume	277
Issue number	128355
DOIs	https://doi.org/10.1016/j.matlet.2020.128355
Publication status	Published - 15 Oct 2020

Bibliographical note

Funding Information:
This work was partially supported by CONACYT under contract No. 252972. Enrique Campos thank Cátedras CONACYT and M.M.-L. wants to thanks for Universidad de Monterrey, México support.

Publisher Copyright:
© 2020 Elsevier B.V.

All Science Journal Classification (ASJC) codes

General Materials Science

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Cite this

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title = "Characterization of MoO3 thin films deposited by laser ablation",

abstract = "Molybdenum oxide thin films were deposited using the laser ablation technique, at three values of working pressure and four values of the mean kinetic energy (E k) of the plasma ions. The structural characterization of the films performed by X-ray diffraction and Raman spectroscopies showed the presence of the α–MoO 3 phase in all cases. On the other hand, the value of the band-gap varied from 2.8 to 3.3 eV, depending on the experimental conditions. The XPS analysis showed a variation of the stoichiometry from MoO 2.5 to MoO 3.4 which could explain the variation of the band-gap. ",

author = "Enrique Campos-Gonzalez and Enrique Camps and Michael Morales-Luna and Carlos Rivera-Rodriguez and Rafael Basurto",

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AU - Campos-Gonzalez, Enrique

AU - Camps, Enrique

AU - Morales-Luna, Michael

AU - Rivera-Rodriguez, Carlos

AU - Basurto, Rafael

N1 - Funding Information: This work was partially supported by CONACYT under contract No. 252972. Enrique Campos thank Cátedras CONACYT and M.M.-L. wants to thanks for Universidad de Monterrey, México support. Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/10/15

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N2 - Molybdenum oxide thin films were deposited using the laser ablation technique, at three values of working pressure and four values of the mean kinetic energy (E k) of the plasma ions. The structural characterization of the films performed by X-ray diffraction and Raman spectroscopies showed the presence of the α–MoO 3 phase in all cases. On the other hand, the value of the band-gap varied from 2.8 to 3.3 eV, depending on the experimental conditions. The XPS analysis showed a variation of the stoichiometry from MoO 2.5 to MoO 3.4 which could explain the variation of the band-gap.

AB - Molybdenum oxide thin films were deposited using the laser ablation technique, at three values of working pressure and four values of the mean kinetic energy (E k) of the plasma ions. The structural characterization of the films performed by X-ray diffraction and Raman spectroscopies showed the presence of the α–MoO 3 phase in all cases. On the other hand, the value of the band-gap varied from 2.8 to 3.3 eV, depending on the experimental conditions. The XPS analysis showed a variation of the stoichiometry from MoO 2.5 to MoO 3.4 which could explain the variation of the band-gap.

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Characterization of MoO3 thin films deposited by laser ablation

Abstract

Bibliographical note

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